- 您现在的位置：买卖IC网 > Sheet目录137 > MURS230T3G (ON Semiconductor)DIODE ULTRA FAST 2A 300V SMB
    MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURS230T3G/NRVUS230T3G MURS240T3G/NRVUS240T3G V V RRM RWM VR 300 400 V Average Rectified Forward Current @ TL = 150 ?C @ TL = 125 ?C IF(AV) 1.0 2.0 A Non?Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 A Operating Junction Temperature Range TJ ?65 to +175 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction?to?Lead (TL = 25 ?C) RJL 13 ?C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 2.0 A, T J = 25 ?C) (iF = 2.0 A, T J = 150 ?C) vF 1.30 1.05 V Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25 ?C) (Rated DC Voltage, TJ = 150 ?C) iR 5.0 150 A Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ s) (iF = 0.5 A, i R = 1.0 A, I R to 0.25 A) trr 65 50 ns Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ s, Rec. to 1.0 V) tfr 50 ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. |